An etching composition for etching a titanium aluminum nitride layer and a method of manufacturing an integrated circuit, the etching composition includes about 15 wt % to about 30 wt % of an oxidizing agent; about 1 wt % to about 10 wt % of a pH adjusting agent, the pH adjusting agent including an inorganic acid or an organic acid; about 0.001 wt % to about 1 wt % of an etching booster; and a solvent, all wt % being based on a total weight of the etching composition.