PLS is further suppressed. A solid-state imaging device includes: a first semiconductor substrate including a first semiconductor layer provided with a plurality of photoelectric conversion units that performs photoelectric conversion, and a first wiring layer provided on a surface side opposite to a light incident surface of the first semiconductor layer; a second semiconductor substrate including a second semiconductor layer provided with a charge holding unit that holds signal charge generated in the photoelectric conversion unit and a second wiring layer provided on one surface side of the second semiconductor layer, and overlapped with and bonded to the first semiconductor substrate such that the second wiring layer is positioned between the first wiring layer and the second semiconductor layer; and a light shielding layer provided in at least one of the first wiring layer or the second wiring layer at a position facing the charge holding unit in a thickness direction.