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公开(公告)号：US20220384498A1
公开(公告)日：2022-12-01
申请号：US17755897
申请日：2020-11-02
发明人： YASUFUMI KOBAYASHI , TAKURO MURASE
IPC分类号： H01L27/146 , H04N5/369
摘要： A solid-state imaging device capable of improving image quality and functionality is provided.
Provided is a solid-state imaging device including a pixel region in which a plurality of pixels are two-dimensionally disposed, in which each of the pixels includes a photoelectric conversion unit and a concavo-convex portion, the photoelectric conversion unit photoelectrically converting incident light formed on a semiconductor substrate, and the concavo-convex portion being positioned above the photoelectric conversion unit and formed on a light receiving surface side of the semiconductor substrate, and the number of irregularities of a concavo-convex portion included in a pixel disposed in a central portion of the pixel region and the number of irregularities of a concavo-convex portion included in a pixel disposed in a peripheral portion of the pixel region are different from each other.-
公开(公告)号：US20240063237A1
公开(公告)日：2024-02-22
申请号：US18260989
申请日：2022-01-07
发明人： TAKURO MURASE
IPC分类号： H01L27/146 , H01L23/00
CPC分类号： H01L27/14623 , H01L27/14636 , H01L27/14634 , H01L24/05 , H01L24/08 , H01L27/14641 , H01L2224/05647 , H01L2224/08145
摘要： PLS is further suppressed. A solid-state imaging device includes: a first semiconductor substrate including a first semiconductor layer provided with a plurality of photoelectric conversion units that performs photoelectric conversion, and a first wiring layer provided on a surface side opposite to a light incident surface of the first semiconductor layer; a second semiconductor substrate including a second semiconductor layer provided with a charge holding unit that holds signal charge generated in the photoelectric conversion unit and a second wiring layer provided on one surface side of the second semiconductor layer, and overlapped with and bonded to the first semiconductor substrate such that the second wiring layer is positioned between the first wiring layer and the second semiconductor layer; and a light shielding layer provided in at least one of the first wiring layer or the second wiring layer at a position facing the charge holding unit in a thickness direction.
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公开(公告)号：US20220239849A1
公开(公告)日：2022-07-28
申请号：US17612533
申请日：2020-04-28
发明人： HIDEKI ARAI , YUSUKE OTAKE , TAKURO MURASE
IPC分类号： H04N5/33 , H01L27/146
摘要： Provided is an imaging device that makes it possible to exhibit a better imaging performance. The imaging device includes a semiconductor layer, a pixel separation section, a plurality of photoelectric conversion sections, and a plurality of electric charge voltage conversion sections. The semiconductor layer has a surface that extends in an in-plane direction, and a back face positioned on an opposite side of the surface in a thickness direction. The pixel separation section extends from the surface to the back face in the thickness direction, and separates the semiconductor layer into a plurality of pixel regions in the in-plane direction. The plurality of photoelectric conversion sections is respectively provided in the plurality of pixel regions of the semiconductor layer separated by the pixel separation section, and is each configured to generate, by a photoelectric conversion, electric charge corresponding to a light amount of incident light from the back face. The plurality of electric charge voltage conversion sections is respectively provided in a plurality of gap regions, in which the plurality of gap regions is disposed in the in-plane direction between the plurality of photoelectric conversion sections and the pixel separation section out of the plurality of pixel regions, and the plurality of electric charge voltage conversion sections respectively accumulates the electric charges generated by the respective plurality of photoelectric conversion sections, and respectively converts the accumulated electric charges into electric signals and outputs the converted electric signals.
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公开(公告)号：US20230044912A1
公开(公告)日：2023-02-09
申请号：US17759118
申请日：2021-01-25
发明人： HIDEKI ARAI , YUSUKE OTAKE , TAKURO MURASE , TAKESHI YAMAZAKI , TAISUKE SUWA
IPC分类号： H04N5/363 , H04N5/372 , H04N5/3745
摘要： The present technology relates to an image sensor, an imaging device, and a ranging device capable of performing imaging so that noise is reduced. A photoelectric conversion unit configured to perform photoelectric conversion; a charge accumulation unit configured to accumulate charges obtained by the photoelectric conversion unit; a transfer unit configured to transfer the charges from the photoelectric conversion unit to the charge accumulation unit; a reset unit configured to reset the charge accumulation unit; a reset voltage control unit configured to control a voltage to be applied to the reset unit; and an additional control unit configured to control addition of capacitance to the charge accumulation unit are included. The charge accumulation unit includes a plurality of regions. The present technology can be applied to, for example, an imaging device that captures an image and a ranging device that performs ranging.
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公开(公告)号：US20210320218A1
公开(公告)日：2021-10-14
申请号：US17250349
申请日：2019-07-04
发明人： TSUTOMU IMOTO , YUJI ISOGAI , TAKUYA MARUYAMA , TAKURO MURASE , RYOTA WATANABE
IPC分类号： H01L31/12 , H01L31/0232 , H01L31/02 , H01L27/144 , H04N5/369 , G01S17/08 , G01S7/481
摘要： The present technology relates to a light-receiving element and a distance-measuring module for enabling improvement of characteristics. A light-receiving element includes an on-chip lens, a wiring layer, a first substrate arranged between the on-chip lens and the wiring layer, and a second substrate bonded to the first substrate via the wiring layer, the first substrate includes a first voltage application portion to which a first voltage is applied, a second voltage application portion to which a second voltage different from the first voltage is applied, a first charge detection portion arranged around the first voltage application portion, and a second charge detection portion arranged around the second voltage application portion, and the second substrate includes a plurality of pixel transistors that performs an operation of reading charges detected in the first and second charge detection portions. The present technology can be applied to, for example, a light-receiving element that generates distance information by a ToF method.
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公开(公告)号：US20210270941A1
公开(公告)日：2021-09-02
申请号：US17250343
申请日：2019-07-04
发明人： RYOTA WATANABE , TOSHIFUMI WAKANO , TAKURO MURASE , TAKUYA MARUYAMA , TSUTOMU IMOTO , YUJI ISOGAI
IPC分类号： G01S7/481 , H01L31/02 , G01S7/4863
摘要： The present technology relates to a light-receiving element and a distance-measuring module for enabling improvement of characteristics. A light-receiving element includes an on-chip lens, a wiring layer, and a semiconductor layer arranged between the on-chip lens and the wiring layer, the semiconductor layer includes a first voltage application portion to which a first voltage is applied, a second voltage application portion to which a second voltage different from the first voltage is applied, a first charge detection portion arranged around the first voltage application portion, and a second charge detection portion arranged around the second voltage application portion, and the wiring layer includes at least one ground line having a wider line width than a power supply line. The present technology can be applied to, for example, a light-receiving element that generates distance information by a ToF method.
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公开(公告)号：US20210203907A1
公开(公告)日：2021-07-01
申请号：US17250462
申请日：2019-06-19
发明人： TAKURO MURASE
IPC分类号： H04N13/207 , H04N5/369 , H04N13/254
摘要： A measurement device according to the present disclosure includes: a pixel including a light receiver, a plurality of storage sections, and an electric charge supplying section, the light receiver configured to generate received-light electric charge by performing photoelectric conversion on the basis of light, the plurality of storage sections configured to store the received-light electric charge and including a first storage section and a second storage section, and the electric charge supplying section configured to selectively supply the received-light electric charge generated by the light receiver to the plurality of storage sections; and a processor configured to generate a first detection value on the basis of an electric charge amount of the received-light electric charge stored in the first storage section, configured to generate a second detection value on the basis of an electric charge amount of the received-light electric charge stored in the second storage section, and configured to generate a first pixel value on the basis of a difference between the first detection value and the second detection value.
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公开(公告)号：US20200028017A1
公开(公告)日：2020-01-23
申请号：US16504875
申请日：2019-07-08
发明人： TSUTOMU IMOTO , YUJI ISOGAI , TAKUYA MARUYAMA , TAKURO MURASE , RYOTA WATANABE , TAKESHI YAMAZAKI
IPC分类号： H01L31/101 , H01L31/0232 , H01L31/02 , H01L31/0224
摘要： A light-receiving element includes an on-chip lens; an interconnection layer; and a semiconductor layer that is disposed between the on-chip lens and the interconnection layer. The semiconductor layer includes a first voltage application unit to which a first voltage is applied, a second voltage application unit to which a second voltage different from the first voltage is applied, a first charge detection unit that is disposed at the periphery of the first voltage application unit, a second charge detection unit that is disposed at the periphery of the second voltage application unit, and a charge discharge region that is provided on an outer side of an effective pixel region. For example, the present technology is applicable to a light-receiving element that generates distance information in a ToF method, or the like.
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