发明公开
- 专利标题： THREE-DIMENSIONAL MEMORY DEVICES, SYSTEMS, AND METHODS FOR FORMING THE SAME
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申请号： US17891055申请日： 2022-08-18
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公开(公告)号： US20240064978A1公开(公告)日： 2024-02-22
- 发明人: Jingtao Xie , Bingjie Yan , Kun Zhang , Wenxi Zhou , Zhiliang Xia , Zongliang Huo
- 申请人： YANGTZE MEMORY TECHNOLOGIES CO., LTD.
- 申请人地址： CN Wuhan
- 专利权人： YANGTZE MEMORY TECHNOLOGIES CO., LTD.
- 当前专利权人： YANGTZE MEMORY TECHNOLOGIES CO., LTD.
- 当前专利权人地址： CN Wuhan
- 主分类号： H01L27/11582
- IPC分类号： H01L27/11582 ; H01L27/11556
摘要：
A three-dimensional (3D) memory device includes a stack, a plurality of contact structures, and a plurality of support structures. The stack in an insulating structure includes a plurality of conductive layers and a plurality of dielectric layers stacked alternatingly, and the stack includes a staircase structure. The plurality of contact structures each extends through the insulating structure and in contact with a respective conductive layer of the plurality of conductive layers in the staircase structure. The plurality of support structures extends through the stack in the staircase structure. Each support structure is in contact with one of the plurality of contact structures.
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