Disclosed is a single photon detection device comprises a first well, a second well provided on the first well, a heavily doped region provided on the second well, and a contact facing the heavily doped region. The first well, the second well, and the contact have a first conductive type. The heavily doped region has a second conductive type that is different from the first conductive type. The region between the heavily doped region and the contact consist of semiconductor materials.