公开(公告)号：US20240120427A1

公开(公告)日：2024-04-11

申请号：US18307790

申请日：2023-04-26

Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Myung-Jae LEE

IPC: H01L31/107 ,  G01J1/44 ,  G01S7/481

CPC classification number: H01L31/1075 ,  G01J1/44 ,  G01S7/4816 ,  G01J2001/4466

Abstract: Disclosed is a single photon detection device that comprises a first well, a heavily doped region provided on the first well, a guard ring provided on a side surface of the heavily doped region, and an insulating pattern inserted into the guard ring. The first well has a first conductivity type. The heavily doped region and the guard ring have a second conductivity type different from the first conductivity type.

公开(公告)号：US20240105741A1

公开(公告)日：2024-03-28

申请号：US18476129

申请日：2023-09-27

Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Myung-Jae LEE ,  Eunsung PARK

IPC: H01L27/146 ,  G01S7/481

CPC classification number: H01L27/1461 ,  G01S7/4816 ,  H01L27/14625 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/14636 ,  H01L27/14643

Abstract: Disclosed is a single-photon avalanche diode comprises a heavily doped region, a first lightly doped region covering the heavily doped region, a guard ring provided on a side surface of the first lightly doped region, a first well covering the first lightly doped region and the guard ring, and a contact electrically connected to the first well. The heavily doped region, the first lightly doped region, and the guard ring have a first conductivity type. The first well and the contact have a second conductivity type.

公开(公告)号：US20240120352A1

公开(公告)日：2024-04-11

申请号：US18308236

申请日：2023-04-27

Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Myung-Jae LEE

IPC: H01L27/146 ,  G01S7/481

CPC classification number: H01L27/1461 ,  G01S7/4816 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/14636

Abstract: Disclosed is an avalanche photodetection device that comprises a photodetection layer, the photodetection layer includes a first well, a heavily doped region provided on the first well, and an anode contact spaced apart from the heavily doped region, a conductivity type of the first well and the anode contact is p-type, a conductivity type of the heavily doped region is n-type, the heavily doped region is configured to be biased with a positive bias, the anode contact is configured to output a signal.

公开(公告)号：US20230215964A1

公开(公告)日：2023-07-06

申请号：US17878405

申请日：2022-08-01

Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Myung-Jae LEE

IPC: H01L31/0352 ,  H01L31/107 ,  H01L27/144

CPC classification number: H01L31/03529 ,  H01L31/107 ,  H01L27/1446 ,  H01L27/1443

Abstract: A single-photon detection pixel includes a substrate, a first well provided in the substrate, a pair of heavily doped regions provided on the first well, and a contact provided between the pair of heavily doped regions, wherein the substrate and the pair of heavily doped regions have a first conductivity type, and the first well and the contact have a second conductivity type that is different from the first conductivity type.

公开(公告)号：US20240069168A1

公开(公告)日：2024-02-29

申请号：US18308202

申请日：2023-04-27

Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Myung-Jae LEE

IPC: G01S7/481

CPC classification number: G01S7/4816

Abstract: Disclosed is a single photon detection device comprises a first well, a second well provided on the first well, a heavily doped region provided on the second well, and a contact facing the heavily doped region. The first well, the second well, and the contact have a first conductive type. The heavily doped region has a second conductive type that is different from the first conductive type. The region between the heavily doped region and the contact consist of semiconductor materials.

公开(公告)号：US20230420584A1

公开(公告)日：2023-12-28

申请号：US17979228

申请日：2022-11-02

Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Myung-Jae LEE ,  In-Ho LEE

IPC: H01L31/0236 ,  H01L31/0232 ,  H01L31/107

CPC classification number: H01L31/0236 ,  H01L31/02327 ,  H01L31/107 ,  G01S7/4816

Abstract: A single-photon detection element includes a substrate including a first surface and a second surface located opposite to each other, and a plurality of plasmonic nanopatterns provided on the second surface, wherein the substrate includes a high-concentration doping region provided adjacent to the first surface, a substrate region provided between the high-concentration doping region and the plurality of plasmonic nanopatterns, and a first well provided between the substrate region and the high-concentration doping region.

公开(公告)号：US20230065873A1

公开(公告)日：2023-03-02

申请号：US17699042

申请日：2022-03-18

Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Myung-Jae LEE

IPC: H01L27/146

Abstract: A single-photon detection device includes a first well having a first conductivity type, a second well provided on the first well and having a second conductivity type that is different from the first conductivity type, a first depletion forming region provided on the second well and having the first conductivity type, a main depletion region provided between the first well and the second well, and a first sub-depletion region provided between the second well and the first depletion forming region, wherein the first well and the first depletion forming region are spaced apart from each other by the second well.