- 专利标题: SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
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申请号: US18116475申请日: 2023-03-02
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公开(公告)号: US20240074146A1公开(公告)日: 2024-02-29
- 发明人: Eunjung KIM , Eun A KIM
- 申请人: SAMSUNG ELECTRONICS CO., LTD.
- 申请人地址: KR Suwon-si
- 专利权人: SAMSUNG ELECTRONICS CO., LTD.
- 当前专利权人: SAMSUNG ELECTRONICS CO., LTD.
- 当前专利权人地址: KR Suwon-si
- 优先权: KR 20220107070 2022.08.25
- 主分类号: H10B12/00
- IPC分类号: H10B12/00 ; H10B61/00 ; H10B63/00 ; H10B63/10
摘要:
A semiconductor device and a method of fabricating a semiconductor device, the semiconductor device includes an active pattern; a gate structure on the active pattern; a bit-line structure electrically connected to the active pattern; a storage node contact electrically connected to the active pattern; and a landing pad electrically connected to the storage node contact, wherein the landing pad includes a first pad flat sidewall and a second pad flat sidewall that are opposite to each other, a third pad flat sidewall between the first pad flat sidewall and the second pad flat sidewall, a fourth pad flat sidewall between the first pad flat sidewall and the second pad flat sidewall, a first pad curved sidewall between the first pad flat sidewall and the third pad flat sidewall, and a second pad curved sidewall between the first pad flat sidewall and the fourth pad flat sidewall.
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