• Patent Title: FULL ADDER CIRCUIT AND MULTI-BIT FULL ADDER
  • Application No.: US18488991
    Application Date: 2023-10-17
  • Publication No.: US20240078086A1
    Publication Date: 2024-03-07
  • Inventor: Jiani GUXiao YU
  • Applicant: ZHEJIANG LAB
  • Applicant Address: CN Hangzhou
  • Assignee: ZHEJIANG LAB
  • Current Assignee: ZHEJIANG LAB
  • Current Assignee Address: CN Hangzhou
  • Priority: CN 2211053864.0 2022.08.31
  • Main IPC: G06F7/503
  • IPC: G06F7/503
FULL ADDER CIRCUIT AND MULTI-BIT FULL ADDER
Abstract:
The present application discloses a full adder circuit and a multi-bit full adder. In the full adder circuit, an in-memory computing field-effect transistor stores data and performs logic operation on the data in the transistor and the loaded data according to different input signals; and a low-area full adder circuit is realized with very few transistors through the characteristics and the reading and writing modes of the in-memory computing field-effect transistor. The full adder circuit has a simple structure, which is greatly reduces the area and complexity of the full adder circuit, and saves 19 transistors compared with the traditional CMOS full adder circuits.
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