Invention Publication
- Patent Title: FULL ADDER CIRCUIT AND MULTI-BIT FULL ADDER
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Application No.: US18488991Application Date: 2023-10-17
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Publication No.: US20240078086A1Publication Date: 2024-03-07
- Inventor: Jiani GU , Xiao YU
- Applicant: ZHEJIANG LAB
- Applicant Address: CN Hangzhou
- Assignee: ZHEJIANG LAB
- Current Assignee: ZHEJIANG LAB
- Current Assignee Address: CN Hangzhou
- Priority: CN 2211053864.0 2022.08.31
- Main IPC: G06F7/503
- IPC: G06F7/503

Abstract:
The present application discloses a full adder circuit and a multi-bit full adder. In the full adder circuit, an in-memory computing field-effect transistor stores data and performs logic operation on the data in the transistor and the loaded data according to different input signals; and a low-area full adder circuit is realized with very few transistors through the characteristics and the reading and writing modes of the in-memory computing field-effect transistor. The full adder circuit has a simple structure, which is greatly reduces the area and complexity of the full adder circuit, and saves 19 transistors compared with the traditional CMOS full adder circuits.
Public/Granted literature
- US12073192B2 Full adder circuit and multi-bit full adder Public/Granted day:2024-08-27
Information query
IPC分类: