A semiconductor device includes: first and second active patterns spaced apart from each other in a third direction; a gate electrode covering the first and second active patterns and extending in a second direction; a first source/drain region disposed on opposing sides of the gate electrode and connected to the first active pattern; a second source/drain region disposed on opposing sides of the gate electrode and connected to the second active pattern; a plurality of first upper metal lines extending in a first direction on the second active pattern and spaced apart from each other in the second direction; and a lower metal line extending in the first direction on the first active pattern, wherein the first direction, the second direction and the third direction intersect each other.