Invention Publication
- Patent Title: METHOD FOR DUAL WAVELENGTH OVERLAY MEASUREMENT WITH FOCUS AT A PHOTORESIST TOP SURFACE AND APPARATUS FOR USING SAME
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Application No.: US17930156Application Date: 2022-09-07
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Publication No.: US20240079341A1Publication Date: 2024-03-07
- Inventor: Katsuya KATO
- Applicant: SANDISK TECHNOLOGIES LLC
- Applicant Address: US TX ADDISON
- Assignee: SANDISK TECHNOLOGIES LLC
- Current Assignee: SANDISK TECHNOLOGIES LLC
- Current Assignee Address: US TX ADDISON
- Main IPC: H01L23/544
- IPC: H01L23/544 ; G03F7/00 ; G03F7/20
Abstract:
An array of alignment marks can be formed in a substrate, and at least one material portion can be deposited and patterned. A photoresist material layer can be deposited and patterned to provide a kerf-region photoresist material portion. The overlay between the kerf-region photoresist material portion and a proximal alignment mark is measured employing a ultraviolet radiation that is focused at a focal plane located at or near a top surface of the kerf-region photoresist material portion.
Information query
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