A surface-emitting semiconductor laser includes a first semiconductor layer of a first conductivity type, an active zone which is suitable for generating electromagnetic radiation, an ordered photonic structure, and a second semiconductor layer of a second conductivity type. The active zone is arranged between the first and second semiconductor layers. The ordered photonic structure is formed in the first semiconductor layer, and a part of the first semiconductor layer is adjacent to both sides of the ordered photonic structure. Alternatively, the ordered photonic structure is arranged in an additional semiconductor layer between the active zone and the second semiconductor layer. A part of the additional semiconductor layer is arranged between the ordered photonic structure and the second semiconductor layer.