公开(公告)号：US12206222B2

公开(公告)日：2025-01-21

申请号：US17407016

申请日：2021-08-19

Applicant: Apple Inc.

Inventor： Jeffrey T. Hill ,  Alfredo Bismuto ,  Tomas Sarmiento

IPC: H01S5/00 ,  H01S5/026 ,  H01S5/042 ,  H01S5/12 ,  H01S5/185 ,  H01S5/187 ,  H01S5/42 ,  H01S5/028 ,  H01S5/183

Abstract: Configurations for an edge-generated vertical emission laser that vertically emits light and fabrication methods of the edge-generated vertical emission laser are disclosed. The edge-generated vertical emission laser may include a distributed feedback (DFB) laser structure, a grating coupler, and contact layers. Light may propagate through the DFB laser structure, approximately parallel to the top surface of the edge-generated vertical emission laser and be directed by the grating coupler toward the top surface of the edge-generated vertical emission laser. The light may vertically emit from the edge-generated vertical emission laser approximately perpendicular to the top surface of the edge-generated vertical emission laser. Additionally, the contact layers may be n-metal and p-metal, which may be located on the same side of the edge-generated vertical emission laser. These features of the edge-generated vertical emission laser may facilitate ease of testing and increased options for packaging.

公开(公告)号：US20240429680A1

公开(公告)日：2024-12-26

申请号：US18829861

申请日：2024-09-10

Applicant: KYOTO UNIVERSITY ,  STANLEY ELECTRIC CO., LTD.

Inventor： Susumu NODA ,  Yoshinori TANAKA ,  Menaka DE ZOYSA ,  Kenji ISHIZAKI ,  Tomoaki KOIZUMI ,  Kei EMOTO

IPC: H01S5/11 ,  C30B25/18 ,  C30B29/40 ,  H01S5/042 ,  H01S5/183 ,  H01S5/185 ,  H01S5/20 ,  H01S5/343

Abstract: A surface emitting laser element includes a substrate and a hexagonal semiconductor structure layer formed on the substrate which emits a light from an upper surface side or a bottom surface side The semiconductor structure layer includes a first clad layer of a first conductivity type, a first guide layer of the first conductivity type having a photonic crystal layer and a first embedding layer, a second embedding layer, an active layer, second guide layer, and a second clad layer of a second conductivity type. The photonic crystal layer has a plurality of voids disposed having two-dimensional periodicity when viewed from above. The first embedding layer is formed on an upper side of the photonic crystal layer and closes openings of the voids. And an oxygen concentration of the second embedding layer is less than an oxygen concentration of the first embedding layer.

公开(公告)号：US12057678B2

公开(公告)日：2024-08-06

申请号：US18137462

申请日：2023-04-21

Applicant: Kyoto University ,  Stanley Electric Co., Ltd.

Inventor： Susumu Noda ,  Tomoaki Koizumi ,  Kei Emoto

IPC: H01S5/20 ,  H01S5/042 ,  H01S5/11 ,  H01S5/185 ,  H01S5/32 ,  H01S5/343

CPC classification number: H01S5/2009 ,  H01S5/04253 ,  H01S5/04254 ,  H01S5/11 ,  H01S5/185 ,  H01S5/2086 ,  H01S5/2095 ,  H01S5/320225 ,  H01S5/320275 ,  H01S5/34333 ,  H01S2301/176 ,  H01S2304/04

Abstract: A method for manufacturing a GaN-based surface-emitting laser by an MOVPE includes: growing a first cladding layer with a {0001} growth plane; growing a guide layer on the first cladding layer; forming holes which are two-dimensionally periodically arranged within the guide layer; etching the guide layer by ICP-RIE using a chlorine-based gas and an argon; supplying a gas containing a nitrogen to cause mass-transport, and then supplying the group-III gas for growth, whereby a first embedding layer closing openings of the holes is formed to form a photonic crystal layer; and growing an active layer and a second cladding layer on the first embedding layer, The step includes a step of referring to already-obtained data on a relationship of an attraction voltage and a ratio of gases in the ICP-RIE with a diameter distribution of air holes embedded, and applying the attraction voltage and the ratio to the ICP-RIE.

公开(公告)号：US11990730B2

公开(公告)日：2024-05-21

申请号：US16973602

申请日：2019-06-19

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Yuta Aoki ,  Kazuyoshi Hirose ,  Satoru Okawara

IPC: H01S5/183 ,  H01S5/11 ,  H01S5/185 ,  H01S5/343

CPC classification number: H01S5/11 ,  H01S5/18305 ,  H01S5/185 ,  H01S5/34333

Abstract: A light-emitting device according to an embodiment includes a structure for increasing an optical confinement coefficient of a layer forming a resonance mode. The light-emitting device includes a first cladding layer, an active layer, a second cladding layer, a resonance mode formation layer, and a high refractive index layer. The first cladding layer, the active layer, the second cladding layer, the resonance mode formation layer, and the high refractive index layer mainly contain nitride semiconductors. The high refractive index layer has a refractive index higher than that of any of the first cladding layer, the active layer, the second cladding layer, and the resonance mode formation layer, and has a superlattice structure in which two or more layers having refractive indices different from each other are repeatedly laminated.

公开(公告)号：US11973318B2

公开(公告)日：2024-04-30

申请号：US17499847

申请日：2021-10-12

Applicant: SEIKO EPSON CORPORATION ,  SOPHIA SCHOOL CORPORATION

Inventor： Takafumi Noda ,  Shunsuke Ishizawa ,  Katsumi Kishino

IPC: H01S5/343 ,  G03B21/20 ,  H01S5/11 ,  H01S5/185 ,  H01S5/02 ,  H01S5/042

CPC classification number: H01S5/34333 ,  H01S5/11 ,  H01S5/185 ,  H01S5/34346 ,  G03B21/2033 ,  H01S5/0218 ,  H01S5/04257

Abstract: A light emitting device includes a substrate, and a laminated structure provided to the substrate, and including a columnar part, wherein the columnar part includes a first GaN layer having a first conductivity type, a second GaN layer having a second conductivity type different from the first conductivity type, and a light emitting layer disposed between the first GaN layer and the second GaN layer, the first GaN layer is disposed between the substrate and the light emitting layer, the light emitting layer has a first well layer as an InGaN layer, the first GaN layer has a c-face region, the first GaN layer has a crystal structure of a cubical crystal, and has a first layer constituting the c-face region, and a second layer as a GaN layer having a crystal structure of a hexagonal crystal is disposed between the first layer and the first well layer.

公开(公告)号：US11588300B2

公开(公告)日：2023-02-21

申请号：US17082475

申请日：2020-10-28

Applicant: Seiko Epson Corporation ,  Sophia School Corporation

Inventor： Hiroaki Jiroku ,  Katsumi Kishino

IPC: H01S5/11 ,  H01S5/34 ,  H01S5/042 ,  H01S5/185 ,  G03B21/20 ,  H01S5/343

Abstract: The light emitting device includes a substrate, and a laminated structure provided to the substrate, and including a plurality of columnar parts, wherein the columnar part includes a first semiconductor layer, a second semiconductor layer different in conductivity type from the first semiconductor layer, and a light emitting layer disposed between the first semiconductor layer and the second semiconductor layer, the laminated structure includes a third semiconductor layer which is connected to an opposite side to the substrate of the second semiconductor layer, and is same in conductivity type as the second semiconductor layer, the second semiconductor layer is disposed between the light emitting layer and the third semiconductor layer, the third semiconductor layer is provided with a recessed part, an opening of the recessed part is provided to a surface at an opposite side to the substrate side of the third semiconductor layer, and a diametrical size in a bottom of the recessed part is smaller than a diametrical size in the opening of the recessed part.

公开(公告)号：US20240413608A1

公开(公告)日：2024-12-12

申请号：US18427644

申请日：2024-01-30

Applicant: TrueLight Corporation

Inventor： Chien Hung PAN ,  Cheng Zu WU

IPC: H01S5/11 ,  H01S5/12 ,  H01S5/183 ,  H01S5/185 ,  H01S5/32

Abstract: The grating layer of a surface emitting laser is divided into a first grating region and a second grating region along a horizontal direction. The second grating region is located at a middle area of the grating layer, while the first grating region is located in an outer peripheral area of the grating layer. Each of the first and second grating regions comprises a plurality of micro-grating structures. The grating period of the micro-grating structures in the first grating region is in accordance with the following mathematical formula: ⋀ = m ⁢ λ 2 * n eff ; in addition, the grating period of the micro-grating structures in the second grating region is in accordance with the following mathematical formula: ⋀ = o ⁢ λ 2 * n eff . Wherein, ∧ is the length of grating period, λ is the wavelength of the laser light, neff is the equivalent refractive index of semiconductor waveguide, m=1, and o=2. The first grating region is a first-order grating region, and the second grating region is a second-order grating region, so as to form a hybrid grating structure in the grating layer. The surface emitting laser emits laser light perpendicularly from a light-emitting surface defined by the second grating region.

公开(公告)号：US12051883B2

公开(公告)日：2024-07-30

申请号：US17787976

申请日：2020-12-23

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Kazuyoshi Hirose ,  Yoshitaka Kurosaka ,  Soh Uenoyama

IPC: G02F1/015 ,  G02F1/025 ,  H01S5/00 ,  H01S5/026 ,  H01S5/11 ,  H01S5/185 ,  H01S5/18

CPC classification number: H01S5/0085 ,  G02F1/0151 ,  G02F1/025 ,  H01S5/026 ,  H01S5/0265 ,  H01S5/11 ,  H01S5/185 ,  G02F2201/12 ,  H01S5/18

Abstract: This disclosure relates to a spatial light modulator, etc., the spatial light modulator being capable of dynamically controlling the phase distribution of light, and provided with a structure having a smaller pixel arrangement period and suitable for high-speed operation. The spatial light modulator includes a substrate. The substrate has a front surface, a back surface, and through-holes arranged one-dimensionally or two-dimensionally and penetrating between the front surface and the back surface. The spatial light modulator further includes layered structures each covering the inner walls of the through-holes. Each layered structure includes a first electroconductive layer on the inner wall, a dielectric layer on the first electroconductive layer and having optical transparency, and a second electroconductive layer on the dielectric layer and having optical transparency. At least one of the first and second electroconductive layers is electrically isolated for each group including one or more through-holes.

公开(公告)号：US11923655B2

公开(公告)日：2024-03-05

申请号：US17269313

申请日：2019-08-27

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Kazuyoshi Hirose ,  Yuu Takiguchi ,  Takahiro Sugiyama ,  Yoshitaka Kurosaka

IPC: H01S5/026 ,  H01S5/11 ,  H01S5/183 ,  H01S5/185 ,  H01S5/343

CPC classification number: H01S5/026 ,  H01S5/18305 ,  H01S5/185 ,  H01S5/11 ,  H01S5/34313 ,  H01S5/34353

Abstract: The present embodiment relates to a light emission device capable of removing zero-order light from output light of an S-iPM laser. The light emission device comprises an active layer and a phase modulation layer. The phase modulation layer includes a base layer and a plurality of modified refractive index regions. In a state in which a virtual square lattice is set on the phase modulation layer, a center of gravity of each modified refractive index region is separated from a corresponding lattice point, and a rotation angle around each lattice point that decides a position of the center of gravity of each modified refractive index region is set according to a phase distribution for forming an optical image. A lattice spacing and an emission wavelength satisfy a condition of M-point oscillation in a reciprocal lattice space of the phase modulation layer. A magnitude of at least one of in-plane wavenumber vectors in four directions formed in the reciprocal lattice space and each including a wavenumber spread corresponding to an angle spread of the output light is smaller than 2π/λ.

公开(公告)号：US20240047944A1

公开(公告)日：2024-02-08

申请号：US18266311

申请日：2021-10-29

Applicant: Sumitomo Electric Industries, Ltd. ,  Kyoto University

Inventor： Naoya KONO ,  Yuki ITO ,  Naoki FUJIWARA ,  Susumu NODA ,  Takuya INOUE ,  Menaka De ZOYSA ,  Kenji ISHIZAKI

IPC: H01S5/11 ,  H01S5/185 ,  H01S5/042

CPC classification number: H01S5/11 ,  H01S5/185 ,  H01S5/04254 ,  H01S5/04253

Abstract: A photonic-crystal surface emitting laser includes a first semiconductor layer, a photonic crystal layer having a refractive index higher than a refractive index of the first semiconductor layer and provided on the first semiconductor layer, and an active layer provided opposite to the first semiconductor layer with respect to the photonic crystal layer. The photonic crystal layer has a first region and a plurality of second regions each having a refractive index different from a refractive index of the first region and periodically disposed in the first region in a plane of the photonic crystal layer. The second regions extend from the photonic crystal layer to the first semiconductor layer.