Invention Publication
- Patent Title: RF CIRCUIT FOR PREVENTING DAMAGE TO POWER AMPLIFIER
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Application No.: US18369943Application Date: 2023-09-19
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Publication No.: US20240097622A1Publication Date: 2024-03-21
- Inventor: Yousung LEE , Dongil YANG , Yohan MOON , Hyoseok NA , Taeyoung KIM
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-do
- Priority: KR 20220117839 2022.09.19 KR 20220141518 2022.10.28
- Main IPC: H03F1/52
- IPC: H03F1/52 ; H03F1/30 ; H03F3/24

Abstract:
According to an embodiment, a Radio Frequency (RF) circuit comprises: a power amplifier; a switching circuit configured to electrically connect the power amplifier to a first switch in case that an output voltage of the power amplifier does not exceed a threshold voltage and to electrically connect the power amplifier to a terminating resistor in case that the output voltage of the power amplifier exceeds the threshold voltage; a first electrical path formed between the power amplifier and the switching circuit; and a first diode connected to a second electrical path formed from a first point of the first electrical path to the switching circuit, the first diode connected between the first point and the switching circuit.
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