- 专利标题: INTEGRATED CIRCUIT WITH BACK-SIDE METAL LINE, METHOD OF FABRICATING THE SAME, AND LAYOUT METHOD
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申请号: US18521375申请日: 2023-11-28
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公开(公告)号: US20240098988A1公开(公告)日: 2024-03-21
- 发明人: Chien-Ying CHEN , Yao-Jen YANG
- 申请人: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 申请人地址: TW Hsinchu
- 专利权人: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 当前专利权人: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 当前专利权人地址: TW Hsinchu
- 主分类号: H10B20/20
- IPC分类号: H10B20/20 ; G06F30/392
摘要:
A method of generating an integrated circuit (IC) layout diagram includes overlapping an active region with a plurality of gate regions, thereby defining a program transistor and a read transistor of a one-time-programmable (OTP) bit, overlapping a through via region with a gate region of the plurality of gate regions or with the active region, and overlapping the through via region with a metal region of a back-side metal layer.
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