There is provided an Al wiring material which can achieve sufficient bond reliability of bonded parts in a high-temperature environment at the time when a semiconductor device operates. The Al wiring material containing one or more of Pd and Pt so as to satisfy


3≤x1a≤90 or 10≤x1b≤250, and



3≤(x1a+x1b)≤300,



where x1a and x1b are respectively a content of Pd [mass ppm] and a content of Pt [mass ppm],
with the balance comprising Al, and
an average crystal grain diameter on a cross-section perpendicular to a longitudinal direction of the Al wiring material is 3 to 35 μm.