Invention Publication
- Patent Title: GAIN CELL USING PLANAR AND TRENCH FERROELECTRIC AND ANTI-FERROELECTRIC CAPACITORS FOR EDRAM
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Application No.: US17958279Application Date: 2022-09-30
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Publication No.: US20240114697A1Publication Date: 2024-04-04
- Inventor: Shriram SHIVARAMAN , Sou-Chi CHANG , Sourav DUTTA , Uygar E. AVCI
- Applicant: Intel Corporation
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Main IPC: H01L27/11507
- IPC: H01L27/11507
Abstract:
Embodiments disclosed herein include a memory device. In an embodiment, the memory device comprises a first transistor, where the first transistor is an access transistor to write data. In an embodiment, the memory device further comprises a ferroelectric capacitor for storing data. In an embodiment, the memory device further comprises a second transistor, where the second transistor is a sense transistor to read the data stored on the ferroelectric capacitor.
Information query
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