Invention Publication
- Patent Title: RF CHIP TO IMPROVE TRANSMIT CHANNEL FLATNESS
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Application No.: US18356308Application Date: 2023-07-21
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Publication No.: US20240120957A1Publication Date: 2024-04-11
- Inventor: Joonggeun LEE , Daechul JEONG , Jeongyeol BAE , Jongsoo LEE , Sangmin YOO
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Suwon-si
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si
- Priority: KR 20220128659 2022.10.07 KR 20220180454 2022.12.21
- Main IPC: H04B1/04
- IPC: H04B1/04 ; H03F3/195 ; H03F3/24

Abstract:
A radio-frequency (RF) chip includes a mixer configured to mix a local oscillation signal with a baseband signal to output an RF signal, an amplification stage configured to amplify the RF signal through a plurality of unit amplifiers operating in response to a first control signal, and a compensation capacitor bank provided between the mixer and the amplification stage. The compensation capacitor bank is configured to adjust a capacitance of the compensation capacitor bank based on a second control signal, the second control signal being complementary to the first control signal.
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