An example phase change memory, as well as an electronic device comprising an example phase change memory, include a plurality of phase change memory cells. Each of the plurality of phase change memory cells includes a first electrode, a phase change body, and a second electrode, which are sequentially arranged in a first direction. The phase change body has a first end face facing the first electrode and a second end face facing the second electrode. The phase change body further includes a convergence portion, and the convergence portion is located between the first end face and the second end face, where a sectional area of the convergence portion in a direction perpendicular to the first direction is relatively smaller than an area of the first end face and an area of the second end face. A preparation method for a phase change memory is also provided.