A gas manifold for single-nozzle deposition chambers comprising a base having a top surface and bottom surface defining a thickness; a primary nozzle having an inlet and outlet extending through the thickness of the base; and a secondary nozzle having an inlet extending partially through the top surface of the base and at least one channel extending a distance from a sidewall of the base having an outlet, the channel in fluid communication with the inlet of the secondary nozzle. The inlet of the primary nozzle has a hollow protrusion extending from the top surface of the base into the gas feed. The channel of the secondary nozzle includes a bend between the sidewall of the base and the outlet configured to pass between a first direct energy source and second direct energy source, the first energy source and second energy source disposed on a top wall of a chamber.