Invention Publication
- Patent Title: TUNING OF READ/WRITE CYCLE TIME DELAY FOR A MEMORY CIRCUIT DEPENDENT ON OPERATIONAL MODE SELECTION
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Application No.: US18379373Application Date: 2023-10-12
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Publication No.: US20240143239A1Publication Date: 2024-05-02
- Inventor: Bhupender SINGH , Hitesh CHAWLA , Tanuj KUMAR , Harsh RAWAT , Kedar Janardan DHORI , Promod KUMAR , Manuj AYODHYAWASI , Nitin CHAWLA
- Applicant: STMicroelectronics International N.V.
- Applicant Address: CH Geneva
- Assignee: STMicroelectronics International N.V.
- Current Assignee: STMicroelectronics International N.V.
- Current Assignee Address: CH Geneva
- Main IPC: G06F3/06
- IPC: G06F3/06

Abstract:
A memory circuit includes an array of memory cells arranged in rows and columns. A word line is connected to the memory cells of each row. A row decoder circuit operates in response to an internal clock and an address to selectively apply a word line signal to one word line and further generate a dummy word line signal. A control circuit includes a clock generator that generates the internal clock which is reset in response to a reset signal. A first delay circuit receives the dummy word line signal and outputs a first delayed dummy word line signal. A second delay circuit receives the dummy word line signal and outputs a second delayed dummy word line signal. A multiplexer circuit selects between the first and second delayed dummy word line signals for output as the reset signal in response to a logic state of a mode control signal.
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