Laser direct structuring, LDS material is molded onto semiconductor dice arranged on die pads in a leadframe and the semiconductor dice are electrically coupled with electrically conductive leads in the leadframe via electrical connections that comprise electrically conductive formations exposed at the front surface of the LDS material, electrically conductive vias between the semiconductor dice and the front surface of the LDS material, as well as electrically conductive lines over the front surface of the LDS material that couple selected ones of the electrically conductive formations with selected ones of the second electrically conductive vias. The electrically conductive vias and lines are provided applying laser beam energy to the front surface of the laser direct structuring material at spatial positions located as a function of the electrically conductive formations exposed at the front surface of the LDS material acting as fiducials. The electrically conductive formations exposed at the front surface of the LDS material may comprise pillar-like extensions of the leadframe leads, electrically conductive material grown on the leads in cavities in the front surface of the LDS material or electrically conductive leads in a lead frame where the die pads are downset with respect to the leads.