公开(公告)号：US20220238405A1

公开(公告)日：2022-07-28

申请号：US17573339

申请日：2022-01-11

Applicant: STMicroelectronics S.r.l.

Inventor： Giovanni GRAZIOSI ,  Aurora SANNA ,  Riccardo VILLA

IPC: H01L23/31 ,  H01L23/538 ,  H01L23/66 ,  H01Q1/22

Abstract: An antenna-in-package semiconductor device includes a semiconductor chip coupled to a planar substrate. An encapsulation body encapsulates the semiconductor chip. The encapsulation body includes a through cavity extending to the planar substrate. A rectilinear wire antenna is mounted within the through cavity and extends, for instance from the planar substrate, along an axis that is transverse to a surface of the planar substrate to which the semiconductor chip is coupled. The rectilinear wire antenna is electrically coupled to the semiconductor chip. An insulating material fills the cavity to encapsulated the rectilinear wire antenna.

公开(公告)号：US20230005826A1

公开(公告)日：2023-01-05

申请号：US17848958

申请日：2022-06-24

Applicant: STMicroelectronics S.r.l.

Inventor： Riccardo VILLA ,  Matteo DE SANTA

IPC: H01L23/495 ,  H01L21/48

Abstract: A semiconductor chip is arranged over a substrate in the form of a leadframe. A set of current-carrying formations configured as conductive ribbons are coupled to the semiconductor chip. The substrate does not include electrically conductive formations for electrically coupling the conductive ribbons to each other. Electrical contacts are formed via wedge bonding, for instance, between adjacent ones of the conductive ribbons so that a contact is provided between the adjacent ones of the conductive ribbons in support of a multi-formation current-carrying channel.

公开(公告)号：US20240145429A1

公开(公告)日：2024-05-02

申请号：US18496634

申请日：2023-10-27

Applicant: STMICROELECTRONICS S.r.l.

Inventor： Riccardo VILLA ,  Guendalina CATALANO

IPC: H01L23/00 ,  H01L21/56 ,  H01L23/31 ,  H01L23/495

CPC classification number: H01L24/82 ,  H01L21/561 ,  H01L23/3135 ,  H01L23/49513 ,  H01L24/24 ,  H01L24/32 ,  H01L24/73 ,  H01L24/92 ,  H01L2224/24105 ,  H01L2224/24247 ,  H01L2224/245 ,  H01L2224/32245 ,  H01L2224/73267 ,  H01L2224/82101 ,  H01L2224/82103 ,  H01L2224/92244 ,  H01L2924/01029

Abstract: Laser direct structuring, LDS material is molded onto semiconductor dice arranged on die pads in a leadframe and the semiconductor dice are electrically coupled with electrically conductive leads in the leadframe via electrical connections that comprise electrically conductive formations exposed at the front surface of the LDS material, electrically conductive vias between the semiconductor dice and the front surface of the LDS material, as well as electrically conductive lines over the front surface of the LDS material that couple selected ones of the electrically conductive formations with selected ones of the second electrically conductive vias. The electrically conductive vias and lines are provided applying laser beam energy to the front surface of the laser direct structuring material at spatial positions located as a function of the electrically conductive formations exposed at the front surface of the LDS material acting as fiducials. The electrically conductive formations exposed at the front surface of the LDS material may comprise pillar-like extensions of the leadframe leads, electrically conductive material grown on the leads in cavities in the front surface of the LDS material or electrically conductive leads in a lead frame where the die pads are downset with respect to the leads.

公开(公告)号：US20230361010A1

公开(公告)日：2023-11-09

申请号：US18140194

申请日：2023-04-27

Applicant: STMicroelectronics S.r.l.

Inventor： Riccardo VILLA

IPC: H01L23/495 ,  H01L23/31 ,  H01L23/36 ,  H01L21/56

CPC classification number: H01L23/49568 ,  H01L23/3121 ,  H01L23/36 ,  H01L21/56 ,  H01L23/49517

Abstract: A semiconductor chip or die is arranged on a first surface of a thermally conductive die pad of a substrate such as a leadframe. An encapsulation of insulating material in molded onto the die pad having the semiconductor die arranged on the first surface. At the second surface of the die pad, opposite the first surface, the encapsulation borders on the die pad at a borderline around the die pad. A recessed portion of the encapsulation is provided, for example, via laser ablation, at the borderline around the die pad. Thermally conductive material such as metal material is filled in the recessed portion of the encapsulation around the die pad. The surface area of the thermally conductive die pad is augmented by the filling of thermally conductive material in the recessed portion of the encapsulation thus improving thermal performance of the device.