Invention Publication
- Patent Title: ACTIVE RECHARGE QUENCHING CIRCUIT FOR NEGATIVE BIAS SPAD
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Application No.: US17975178Application Date: 2022-10-27
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Publication No.: US20240145503A1Publication Date: 2024-05-02
- Inventor: Mohammed AL-RAWHANI , Bruce RAE
- Applicant: STMicroelectronics (Research & Development) Limited
- Applicant Address: GB Marlow
- Assignee: STMicroelectronics (Research & Development) Limited
- Current Assignee: STMicroelectronics (Research & Development) Limited
- Current Assignee Address: GB Marlow
- Main IPC: H01L27/146
- IPC: H01L27/146 ; H01L31/107

Abstract:
Disclosed herein is a single photon avalanche diode (SPAD) pixel for use in time-of-flight imaging. This pixel includes a SPAD having a cathode connected to a first node and an anode coupled to first negative voltage. A transistor circuit in the pixel includes a quench transistor connected between a supply voltage node and a second node, the quench transistor controlled by a quench control signal to operate in a high-impedance mode, and a recharge transistor connected in parallel with the quench transistor between the supply voltage node and the second node, the recharge transistor controlled by a feedback signal. The pixel also includes a readout inverter generating an output signal based upon a voltage at the first node and an adjustable delay circuit generating the feedback signal based upon the output signal, the feedback signal being delayed with respect to the output signal.
Information query
IPC分类: