EXTENDED HOLD-OFF TIME FOR SPAD QUENCH ASSISTANCE

    公开(公告)号:US20210181017A1

    公开(公告)日:2021-06-17

    申请号:US17071326

    申请日:2020-10-15

    Abstract: A photodetection circuit includes a single photon avalanche diode (SPAD) having a cathode coupled to a high voltage supply through a quench resistance and an anode coupled to a first node, a capacitive deep trench isolation capacitor coupled between the first node and ground, and a first n-channel transistor. The first n-channel transistor has a drain coupled to the first node, a source coupled to ground, and a gate coupled to a resistance control signal. A second n-channel transistor has a drain coupled to the first node, a source coupled to ground, and a gate coupled to a second node. An inverter has an input coupled to the first node and an output coupled to an intermediate node. A current starved inverter has an input coupled to the intermediate node and an output coupled to the second node.

    NON-CONTIGUOUS LAYOUTS FOR PHOTOSENSITIVE APPARATUS

    公开(公告)号:US20200083395A1

    公开(公告)日:2020-03-12

    申请号:US16560527

    申请日:2019-09-04

    Abstract: An apparatus includes at least one detector configured to receive return light from an object within a detector field of view the light generated by a light source. The detector includes first and second photosensitive regions configured to receive the return light from the light source. At least one non-photosensitive region is included, and the first and second photosensitive regions are separated by the at least one non-photosensitive region. The at least one non-photosensitive region is associated with one of the first or second photosensitive regions.

    PROTECTED ELECTRONIC INTEGRATED CIRCUIT CHIP

    公开(公告)号:US20190385957A1

    公开(公告)日:2019-12-19

    申请号:US16436747

    申请日:2019-06-10

    Abstract: An electronic integrated circuit chip includes a semiconductor substrate with a front side and a back side. A first reflective shield is positioned adjacent the front side of the semiconductor substrate and a second reflective shield is positioned adjacent the back side of the semiconductor substrate. Photons are emitted by a photon source to pass through the semiconductor substrate and bounce off the first and second reflective shields to reach a photon detector at the front side of the semiconductor substrate. The detected photons are processed in order to determine whether to issue an alert indicating the existence of an attack on the electronic integrated circuit chip.

    TIME OF FLIGHT SENSING UNIT HAVING RECONFIGURABLE OR LOGIC

    公开(公告)号:US20210351777A1

    公开(公告)日:2021-11-11

    申请号:US17379658

    申请日:2021-07-19

    Abstract: An electronic device includes a time-of-flight unit with a laser emitting ranging light toward a scene, and a detector detecting ranging light reflected from the scene. The detector includes photodetection regions of macropixels. Each macropixel includes photodiodes, and OR logic circuitry receiving outputs of photodiodes as input and generating a detection signal. Each macropixel has output combining logic, and selection circuitry selectively passing the detection signal to the output combining logic or to output combining logic of a neighboring macropixel. The output combining logic has inputs coupled to the selection circuitry and the selection circuitry of the neighboring macropixel, and generates an output signal by logically combining outputs of the selection circuitry and the selection circuitry of the neighboring macropixel. Timing circuitry determines distances to points of the scene from elapsed time between emitting the ranging light and detecting of ranging light reflected from the scene by the photodetection regions.

    PROTECTED ELECTRONIC INTEGRATED CIRCUIT CHIP

    公开(公告)号:US20210183792A1

    公开(公告)日:2021-06-17

    申请号:US17166156

    申请日:2021-02-03

    Abstract: An electronic integrated circuit chip includes a semiconductor substrate with a front side and a back side. A first reflective shield is positioned adjacent the front side of the semiconductor substrate and a second reflective shield is positioned adjacent the back side of the semiconductor substrate. Photons are emitted by a photon source to pass through the semiconductor substrate and bounce off the first and second reflective shields to reach a photon detector at the front side of the semiconductor substrate. The detected photons are processed in order to determine whether to issue an alert indicating the existence of an attack on the electronic integrated circuit chip.

    ACTIVE RECHARGE QUENCHING CIRCUIT FOR NEGATIVE BIAS SPAD

    公开(公告)号:US20240145503A1

    公开(公告)日:2024-05-02

    申请号:US17975178

    申请日:2022-10-27

    CPC classification number: H01L27/14616 H01L27/14643 H01L31/107

    Abstract: Disclosed herein is a single photon avalanche diode (SPAD) pixel for use in time-of-flight imaging. This pixel includes a SPAD having a cathode connected to a first node and an anode coupled to first negative voltage. A transistor circuit in the pixel includes a quench transistor connected between a supply voltage node and a second node, the quench transistor controlled by a quench control signal to operate in a high-impedance mode, and a recharge transistor connected in parallel with the quench transistor between the supply voltage node and the second node, the recharge transistor controlled by a feedback signal. The pixel also includes a readout inverter generating an output signal based upon a voltage at the first node and an adjustable delay circuit generating the feedback signal based upon the output signal, the feedback signal being delayed with respect to the output signal.

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