An IGBT includes first and second trenches arranged side by side on a front surface of a semiconductor substrate, a collector region formed on a back surface side of the semiconductor substrate, a body region and an emitter region provided between the first and second trenches, a first trench gate electrode provided in the first trench, a second trench gate electrode provided in the second trench, a third trench gate electrode provided below the first trench gate electrode in the first trench, a fourth trench gate electrode provided below the second trench gate electrode in the second trench, and a floating region formed in the semiconductor substrate with the first and second trenches interposed therebetween.