Invention Publication
- Patent Title: SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
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Application No.: US18308376Application Date: 2023-04-27
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Publication No.: US20240147697A1Publication Date: 2024-05-02
- Inventor: Yanghee LEE , Byoungho KWON , Seongeun KIM , Sujeong KIM , Jonghyuk PARK , Ilyoung YOON , Woohyuk JANG , Byungsoo JOO
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si
- Priority: KR 20220142978 2022.10.31
- Main IPC: H10B12/00
- IPC: H10B12/00

Abstract:
A semiconductor device includes a substrate, a chip region in the substrate, a scribe lane region in the substrate, first active patterns in the chip region, a first device isolation pattern on the first active patterns, second active patterns in the scribe lane region, and a second device isolation pattern on the second active patterns. The scribe lane region is adjacent to the chip region. The first device isolation pattern includes a first device isolation material, and the second device isolation pattern includes a second device isolation material. The second device isolation material is different from the first device isolation material.
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