Invention Publication
- Patent Title: Light-Emitting Apparatus and Electronic Device
-
Application No.: US18275759Application Date: 2022-02-02
-
Publication No.: US20240147745A1Publication Date: 2024-05-02
- Inventor: Yui YOSHIYASU , Naoaki HASHIMOTO , Tatsuyoshi TAKAHASHI , Sachiko KAWAKAMI , Satoshi SEO
- Applicant: Semiconductor Energy Laboratory Co., Ltd.
- Applicant Address: JP Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Kanagawa-ken
- Priority: JP 21021328 2021.02.12 JP 21021329 2021.02.12
- International Application: PCT/IB2022/050880 2022.02.02
- Date entered country: 2023-08-03
- Main IPC: H10K50/11
- IPC: H10K50/11 ; H10K50/16 ; H10K50/17 ; H10K59/95 ; H10K71/20 ; H10K85/10

Abstract:
A light-emitting device with a high resolution and favorable characteristics manufactured by a photolithography method is provided. In the light-emitting device, a first light-emitting device and a second light-emitting device are adjacent each other. The first light-emitting device includes a first EL layer, and the second light-emitting device includes a second EL layer. The first EL layer includes at least a first light-emitting layer and a first electron-transport layer, and the second EL layer includes at least a second light-emitting layer and a second electron-transport layer. The first electron-transport layer contains a first heteroaromatic compound and a first organic compound, and the second electron-transport layer contains a second heteroaromatic compound and a second organic compound. Edge portions of the first light-emitting layer and the first electron-transport layer are aligned, and edge portions of the second light-emitting layer and the second electron-transport layer are substantially aligned. The distance between the first light-emitting device and the second light-emitting device facing each other is 2 μm to 5 μm.
Information query