- 专利标题: CAPACITOR AND A DRAM DEVICE INCLUDING THE SAME
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申请号: US18416313申请日: 2024-01-18
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公开(公告)号: US20240164085A1公开(公告)日: 2024-05-16
- 发明人: Kyooho Jung , Dongkwan Baek , Cheoljin Cho
- 申请人: Samsung Electronics Co., Ltd.
- 申请人地址: KR Suwon-si, Gyeonggi-do
- 专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人地址: KR Suwon-si, Gyeonggi-do
- 优先权: KR 20210087102 2021.07.02
- 主分类号: H10B12/00
- IPC分类号: H10B12/00
摘要:
A capacitor may include a lower electrode, a dielectric layer structure on the lower electrode, and an upper electrode on the dielectric layer structure. The dielectric layer structure may include a plurality of dielectric layers and at least one insert layer structure between ones of the plurality of dielectric layers. The insert layer structure may include a plurality of zirconium oxide layers and at least one insert layer. The insert layer may be between ones of the plurality of zirconium oxide layers. The capacitor may have a high capacitance and low leakage currents.
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