Invention Publication
- Patent Title: REFLECTIVE MASK BLANK, REFLECTIVE MASK, METHOD OF MANUFACTURING REFLECTIVE MASK BLANK, AND METHOD OF MANUFACTURING REFLECTIVE MASK
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Application No.: US18382269Application Date: 2023-10-20
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Publication No.: US20240168370A1Publication Date: 2024-05-23
- Inventor: Shunya TAKI , Hiroaki IWAOKA , Daijiro AKAGI , Ichiro ISHIKAWA
- Applicant: AGC Inc.
- Applicant Address: JP Tokyo
- Assignee: AGC Inc.
- Current Assignee: AGC Inc.
- Current Assignee Address: JP Tokyo
- Priority: JP 21138856 2021.08.27
- Main IPC: G03F1/26
- IPC: G03F1/26 ; G03F1/24 ; G03F1/48 ; G03F1/80
Abstract:
A reflective mask blank containing a substrate, a multilayer reflective film that reflects EUV light, and a phase shift film that shifts a phase of the EUV light, the substrate, the multilayer reflective film, and the phase shift film being arranged in this order. The phase shift film contains a compound containing Ru and Cr, an element ratio between Cr and Ru (Cr:Ru) in the phase shift film is 5:95 to 42:58, and a melting point MP1 of an oxide of the compound and a melting point MP2 of a fluoride or an oxyfluoride of the compound satisfy the following relation (1):
0.625 MP1+MP2≤1000 (1).
0.625 MP1+MP2≤1000 (1).
Public/Granted literature
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