发明公开
- 专利标题： SEMICONDUCTOR DEVICE
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申请号： US18511535申请日： 2023-11-16
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公开(公告)号： US20240170398A1公开(公告)日： 2024-05-23
- 发明人: Hiromichi TAKAOKA , Yoshiyuki SATO , Yuki FUJIMOTO
- 申请人： Renesas Electronics Corporation
- 申请人地址： JP Tokyo
- 专利权人： Renesas Electronics Corporation
- 当前专利权人： Renesas Electronics Corporation
- 当前专利权人地址： JP Tokyo
- 优先权： JP 22183959 2022.11.17
- 主分类号： H01L23/525
- IPC分类号： H01L23/525
摘要：
The dielectric film IF is disposed on the semiconductor substrate SB, and the plurality of electric fuse portions FU are disposed on the dielectric film IF. The n-type first well region WL1 is disposed in the semiconductor substrate SB and on the surface of the semiconductor substrate SB. The first well region WL1 is formed by integrally connecting the well region WLa located under each of the plurality of electric fuse portions FU to each other.
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