An electrostatic discharge (ESD) protection circuit is provided. The ESD circuit includes a first transistor, a second transistor, and a silicon-controlled rectifier (SCR) circuit. The first transistor includes a first current electrode coupled at a first node, and a second current electrode and a control electrode coupled at a first voltage supply node. The second transistor includes a first current electrode, a second current electrode, and a control electrode. The control electrode of the second transistor is coupled at a body electrode of the first transistor. The SCR circuit includes an anode electrode coupled at the first node, a cathode electrode coupled at the first voltage supply node, and a trigger input coupled at the first current electrode of the second transistor.