Invention Publication
- Patent Title: HEMT TRANSISTOR OF THE NORMALLY OFF TYPE INCLUDING A TRENCH CONTAINING A GATE REGION AND FORMING AT LEAST ONE STEP, AND CORRESPONDING MANUFACTURING METHOD
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Application No.: US18530050Application Date: 2023-12-05
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Publication No.: US20240178301A1Publication Date: 2024-05-30
- Inventor: Ferdinando IUCOLANO , Alfonso PATTI , Alessandro CHINI
- Applicant: STMICROELECTRONICS S.r.l.
- Applicant Address: IT Agrate Brianza
- Assignee: STMICROELECTRONICS S.r.l.
- Current Assignee: STMICROELECTRONICS S.r.l.
- Current Assignee Address: IT Agrate Brianza
- Priority: IT 2015000072111 2015.11.12
- The original application number of the division: US17396154 2021.08.06
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L29/20 ; H01L29/205 ; H01L29/423 ; H01L29/778

Abstract:
A method forms an HEMT transistor of the normally off type, including: a semiconductor heterostructure, which comprises at least one first layer and one second layer, the second layer being set on top of the first layer; a trench, which extends through the second layer and a portion of the first layer; a gate region of conductive material, which extends in the trench; and a dielectric region, which extends in the trench, coats the gate region, and contacts the semiconductor heterostructure. A part of the trench is delimited laterally by a lateral structure that forms at least one first step. The semiconductor heterostructure forms a first edge and a second edge of the first step, the first edge being formed by the first layer.
Public/Granted literature
- US2764810A Process for making a rectangularized television tube body Public/Granted day:1956-10-02
Information query
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