Invention Publication
- Patent Title: HIGH-ELECTRON-MOBILITY TRANSISTOR
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Application No.: US18070800Application Date: 2022-11-29
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Publication No.: US20240178310A1Publication Date: 2024-05-30
- Inventor: Santosh SHARMA , Rajendran KRISHNASAMY , Johnatan A. KANTAROVSKY
- Applicant: GlobalFoundries U.S. Inc.
- Applicant Address: US NY Malta
- Assignee: GlobalFoundries U.S. Inc.
- Current Assignee: GlobalFoundries U.S. Inc.
- Current Assignee Address: US NY Malta
- Main IPC: H01L29/778
- IPC: H01L29/778 ; H01L29/10 ; H01L29/20 ; H01L29/40 ; H01L29/66
Abstract:
The present disclosure relates to semiconductor structures and, more particularly, to a high-electron-mobility transistor and methods of manufacture. The structure includes: a gate structure; and a channel region under the gate structure, the channel region having a first portion including a first thickness and a second portion having a second thickness greater than the first thickness, the second portion being positioned remotely from the gate structure.
Information query
IPC分类:
