Invention Publication
- Patent Title: SEMICONDUCTOR DEVICE
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Application No.: US18431693Application Date: 2024-02-02
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Publication No.: US20240178316A1Publication Date: 2024-05-30
- Inventor: Kentaro NASU
- Applicant: ROHM CO., LTD.
- Applicant Address: JP Kyoto
- Assignee: ROHM CO., LTD.
- Current Assignee: ROHM CO., LTD.
- Current Assignee Address: JP Kyoto
- Priority: JP 21128850 2021.08.05
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L21/265 ; H01L21/266 ; H01L29/06 ; H01L29/08 ; H01L29/16 ; H01L29/417 ; H01L29/66

Abstract:
A semiconductor device includes a first conductivity type first semiconductor region formed in a region on the first main surface side in a chip, a second conductivity type second semiconductor region formed in a region on the second main surface side in the chip, a first groove structure including a first groove formed in the first main surface while passing through the first semiconductor region so as to partition the first semiconductor region into a first region and a second region as viewed in cross-section, a control insulating film that covers a wall surface of the first groove, and a control electrode embedded in the first groove while sandwiching the control insulating film so as to control a channel in the second semiconductor region, a first electrode electrically connected to the first semiconductor region in the first region, and a second groove structure including a second groove formed in the first main surface while passing through the first semiconductor region in the second region, and a second electrode embedded in the second groove so as to form a current path via the channel between the first electrode and the second electrode.
Information query
IPC分类: