- 专利标题： THIN FILM TRANSISTOR INCLUDING A HYDROGEN-BLOCKING DIELECTRIC BARRIER AND METHODS FOR FORMING THE SAME
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申请号： US18432574申请日： 2024-02-05
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公开(公告)号： US20240178322A1公开(公告)日： 2024-05-30
- 发明人: Neil Quinn Murray , Mauricio Manfrini , Hung-Wei Li
- 申请人： Taiwan Semiconductor Manufacturing Company Limited
- 申请人地址： TW Hsinchu
- 专利权人： Taiwan Semiconductor Manufacturing Company Limited
- 当前专利权人： Taiwan Semiconductor Manufacturing Company Limited
- 当前专利权人地址： TW Hsinchu
- 主分类号： H01L29/786
- IPC分类号： H01L29/786 ; H01L21/02 ; H01L29/66
摘要：
A thin film transistor includes an insulating matrix layer including an opening therein, a hydrogen-blocking dielectric barrier layer continuously extending over a bottom surface and sidewalls of the opening and over a top surface of the insulating matrix layer, a gate electrode located within the opening, a stack of a gate dielectric and a semiconducting metal oxide plate overlying the gate electrode and horizontally-extending portions of the hydrogen-blocking dielectric barrier layer that overlie the insulating matrix layer, and a source electrode and a drain electrode contacting a respective portion of a top surface of the semiconducting metal oxide plate.
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