Invention Publication
- Patent Title: FULLY DIFFERENTIAL ESD CIRCUIT FOR HIGH-FREQUENCY APPLICATIONS
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Application No.: US18070386Application Date: 2022-11-28
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Publication No.: US20240178662A1Publication Date: 2024-05-30
- Inventor: Kshitij YADAV , Vijayakumar DHANASEKARAN , Khaled Mahmoud ABDELFATTAH ALY , Ramkumar SIVAKUMAR
- Applicant: QUALCOMM Incorporated
- Applicant Address: US CA San Diego
- Assignee: QUALCOMM Incorporated
- Current Assignee: QUALCOMM Incorporated
- Current Assignee Address: US CA San Diego
- Main IPC: H02H9/04
- IPC: H02H9/04

Abstract:
A differential ESD circuit is provided for protecting a pair of differential terminals of an integrated circuit from electrostatic shock. A first diode couples between a first terminal in the pair of differential terminals and a first resistor that couples to a voltage node of the integrated circuit. Similarly, a second diode couples between a second terminal in the pair of differential terminals and a second resistor that couples to the voltage node of the integrated circuit. The first and second resistors isolate the first and second terminals from a capacitive loading that would otherwise exist from the first and second diodes.
Public/Granted literature
- US12244138B2 Fully differential ESD circuit for high-frequency applications Public/Granted day:2025-03-04
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