Invention Publication
- Patent Title: METHOD OF SEMICONDUCTOR PROCESS SIMULATION
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Application No.: US18534184Application Date: 2023-12-08
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Publication No.: US20240193323A1Publication Date: 2024-06-13
- Inventor: Yukihide TSUJI , Hisashi KOTAKEMORI , Shinwook YI , Yuntae LEE
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Suwon-si, Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si, Gyeonggi-do
- Priority: KR 20220171859 2022.12.09
- Main IPC: G05B19/4099
- IPC: G05B19/4099

Abstract:
A simulation method of a semiconductor process includes receiving first input data including values of a plurality of parameters received from the outside, setting a simulation using the plurality of parameters, improving the simulation by ordering the plurality of parameters, and executing the simulation by processing a job stored in a queue, wherein the optimizing includes generating a table with respect to the plurality of parameters, ordering the plurality of parameters based on the first input data, generating a job tree based on the plurality of ordered parameters, reconstructing the table based on the job tree, and generating the queue by storing the job in the queue based on the reconstructed table.
Information query
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