发明公开
- 专利标题: SEMICONDUCTOR DEVICE
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申请号: US18537850申请日: 2023-12-13
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公开(公告)号: US20240203835A1公开(公告)日: 2024-06-20
- 发明人: Masatsugu YUTANI , Hajime KATAOKA
- 申请人: ROHM CO., LTD.
- 申请人地址: JP Kyoto
- 专利权人: ROHM CO., LTD.
- 当前专利权人: ROHM CO., LTD.
- 当前专利权人地址: JP Kyoto
- 优先权: JP 22200307 2022.12.15
- 主分类号: H01L23/495
- IPC分类号: H01L23/495 ; H01L21/66 ; H01L23/00 ; H01L25/065
摘要:
There is provided a semiconductor device including a semiconductor chip including a first main surface and a second main surface opposite to the first main surface, an element region formed on the first main surface and including an element part, and a non-element region outside the element region, an insulating layer covering the element region and the non-element region, a first pad formed on the insulating layer and electrically connected to the element part, a second pad formed on the insulating layer and electrically connected to the element part via a path electrically separated from the first pad, a first uneven structure formed by a buried body, which has conductivity and is buried in the insulating layer, below the first pad of the insulating layer, and a second uneven structure formed by deposits deposited on a surface of the insulating layer, below the second pad of the insulating layer.
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