公开(公告)号：US20240203835A1

公开(公告)日：2024-06-20

申请号：US18537850

申请日：2023-12-13

申请人： ROHM CO., LTD.

发明人： Masatsugu YUTANI ,  Hajime KATAOKA

IPC分类号： H01L23/495 ,  H01L21/66 ,  H01L23/00 ,  H01L25/065

CPC分类号： H01L23/4951 ,  H01L22/32 ,  H01L23/4952 ,  H01L23/49575 ,  H01L24/08 ,  H01L24/48 ,  H01L25/0652 ,  H01L2224/08137 ,  H01L2224/08225 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/13055 ,  H01L2924/1306

摘要： There is provided a semiconductor device including a semiconductor chip including a first main surface and a second main surface opposite to the first main surface, an element region formed on the first main surface and including an element part, and a non-element region outside the element region, an insulating layer covering the element region and the non-element region, a first pad formed on the insulating layer and electrically connected to the element part, a second pad formed on the insulating layer and electrically connected to the element part via a path electrically separated from the first pad, a first uneven structure formed by a buried body, which has conductivity and is buried in the insulating layer, below the first pad of the insulating layer, and a second uneven structure formed by deposits deposited on a surface of the insulating layer, below the second pad of the insulating layer.

公开(公告)号：US20240203814A1

公开(公告)日：2024-06-20

申请号：US18588034

申请日：2024-02-27

申请人： ROHM CO., LTD.

发明人： Kazuki YOSHIDA ,  Hajime KATAOKA

IPC分类号： H01L23/31 ,  H01L23/00 ,  H01L29/417

CPC分类号： H01L23/3171 ,  H01L24/40 ,  H01L29/41775 ,  H01L24/37 ,  H01L2224/37124 ,  H01L2224/37147 ,  H01L2224/40245 ,  H01L2924/13091

摘要： A semiconductor device includes a semiconductor element and a conductive member. The semiconductor element includes a first wiring line connected to the conductive member, a second wiring line separated from the first wiring line and at least partially surrounding the first wiring line, and a passivation layer covering the first wiring line and the second wiring line. The passivation layer includes a first opening partially exposing the first wiring line as a connection region for the conductive member, a first slit located between the first opening and the second wiring line and partially exposing the first wiring line, and a second slit partially exposing the second wiring line.

公开(公告)号：US20220328437A1

公开(公告)日：2022-10-13

申请号：US17714830

申请日：2022-04-06

申请人： ROHM CO., LTD.

发明人： Kazuki YOSHIDA ,  Hajime KATAOKA

IPC分类号： H01L23/00 ,  H01L23/31 ,  H01L23/495

摘要： A semiconductor device includes: a semiconductor element that includes an element main body having an element main surface facing one side in a thickness direction, and a first electrode arranged on the element main surface; a first insulating layer that is arranged over a peripheral edge portion of the first electrode and the element main surface and includes a first annular portion formed in an annular shape when viewed in the thickness direction; and a second insulating layer that is laminated on the first insulating layer, is made of a resin material, and includes a second annular portion overlapping with the first annular portion when viewed in the thickness direction.

公开(公告)号：US20220320012A1

公开(公告)日：2022-10-06

申请号：US17706230

申请日：2022-03-28

申请人： ROHM CO., LTD.

发明人： Kazuki YOSHIDA ,  Hajime KATAOKA

IPC分类号： H01L23/00 ,  H01L23/495 ,  H01L21/48

摘要： A semiconductor device includes: a semiconductor element that includes an element main body having an element main surface and an element back surface facing opposite sides to each other in a thickness direction, and a first electrode arranged on the element main surface; an insulator that has an annular shape overlapping an outer peripheral edge of the first electrode when viewed in the thickness direction and is arranged over the first electrode and the element main surface; a first metal layer arranged over the first electrode and the insulator; and a second metal layer laminated on the first metal layer and overlapping both the first electrode and the insulator when viewed in the thickness direction.

公开(公告)号：US20210367071A1

公开(公告)日：2021-11-25

申请号：US17323500

申请日：2021-05-18

申请人： ROHM Co., Ltd.

发明人： Tomoaki SHINODA ,  Hajime KATAOKA

IPC分类号： H01L29/78 ,  H01L29/423 ,  H01L29/66 ,  H01L27/088 ,  H01L23/522

摘要： A semiconductor device includes: a semiconductor chip; and a field effect transistor formed on the semiconductor chip and including a plurality of unit cells, which include at least one first unit cell including a first on-resistance component and a first feedback capacitance component, and at least one second unit cell including a second on-resistance component forming a parallel component with respect to the first on-resistance component and exceeding the first on-resistance component and a second feedback capacitance component forming a parallel component with respect to the first feedback capacitance component and being less than the first feedback capacitance component.