Invention Publication
- Patent Title: INTEGRATED CIRCUITS HAVING CROSS-COUPLE CONSTRUCTS AND SEMICONDUCTOR DEVICES INCLUDING INTEGRATED CIRCUITS
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Application No.: US18596731Application Date: 2024-03-06
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Publication No.: US20240203974A1Publication Date: 2024-06-20
- Inventor: JUNG-HO DO , DAL-HEE LEE , JIN-YOUNG LIM , TAE-JOONG SONG , JONG-HOON JUNG
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Suwon-si
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si
- Priority: KR 20170178738 2017.12.22
- Main IPC: H01L27/02
- IPC: H01L27/02 ; G06F30/00 ; G11C5/06 ; G11C8/16 ; G11C11/412 ; H01L21/768 ; H01L27/088 ; H01L27/118

Abstract:
An integrated circuit may include a first active region and a second active region, and the first and second active regions may extend on a substrate in a first horizontal direction in parallel to each other and have different conductivity types from each other. A first gate line may extend in a second horizontal direction crossing the first horizontal direction, and may form a first transistor with the first active region. The first transistor may include a gate to which a first input signal is applied. The first gate line may include a first partial gate line that overlaps the first active region in a perpendicular direction and that has an end on a region between the first and second active regions.
Information query
IPC分类: