Invention Publication
- Patent Title: METHODS FOR FORMING SEMICONDUCTOR STACKED STRUCTURES ON A SUBSTRATE AND RELATED SEMICONDUCTOR STRUCTURES
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Application No.: US18540230Application Date: 2023-12-14
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Publication No.: US20240204057A1Publication Date: 2024-06-20
- Inventor: Amir Kajbafvala , Yanfu Lu , Caleb Miskin
- Applicant: ASM IP Holding B.V.
- Applicant Address: NL Almere
- Assignee: ASM IP Holding B.V.
- Current Assignee: ASM IP Holding B.V.
- Current Assignee Address: NL Almere
- Main IPC: H01L29/161
- IPC: H01L29/161 ; H01L21/02 ; H01L21/66 ; H01L29/06 ; H01L29/423 ; H01L29/66 ; H01L29/775 ; H01L29/786
Abstract:
Methods for forming semiconductor stacked structures are disclosed. The methods may include, seating a substrate within a chamber body, and regulating a temperature profile across an upper surface of the substrate during each individual step of a sequential deposition process. Semiconductor stacked structures including two or more bilayers of SiGe/Si with intervening interface layers are also disclosed.
Information query
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