An overvoltage protection device includes a semiconductor die, first and second semiconductor devices that are monolithically integrated in the semiconductor die and arranged in an anti-serial configuration with a conductive link connected between the first and second semiconductor devices at a central node of the overvoltage protection device, the first and second semiconductor devices each being two terminal semiconductor devices with one way conduction characteristics, a first conductive electrode connected to a terminal of the first semiconductor device that is opposite from the central node, a second conductive electrode connected to a terminal of the second semiconductor device that is opposite from the central node, a monolithically integrated feature of the semiconductor die that compensates for a parasitic capacitance of the overvoltage protection device such that the capacitances of the overvoltage protection device under operation are substantially symmetrical with respect to the central node.