Invention Publication
- Patent Title: SEMICONDUCTOR DEVICES
-
Application No.: US18595542Application Date: 2024-03-05
-
Publication No.: US20240213253A1Publication Date: 2024-06-27
- Inventor: Ho-Jun Kim , Jaehyeoung Ma , Geumjong Bae
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Suwon-si
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si
- Priority: KR 20180087911 2018.07.27
- The original application number of the division: US17199497 2021.03.12
- Main IPC: H01L27/118
- IPC: H01L27/118 ; H01L29/423

Abstract:
Semiconductor devices and methods of forming the same are provided. Semiconductor devices may include first and second active patterns on a substrate. Each of the first and second active patterns may extend in a first direction. The first and second active patterns may be aligned along the first direction and may be separated by a first trench extending in a second direction. The first trench may define a first sidewall of the first active pattern. The semiconductor devices may also include a channel pattern including first and second semiconductor patterns stacked on the first active pattern, a dummy gate electrode on the channel pattern and extending in the second direction, and a gate spacer on one side of the dummy gate electrode, the one side of the dummy gate electrode being adjacent to the first trench. The gate spacer may cover a first sidewall of the first active pattern.
Public/Granted literature
- US12250836B2 Semiconductor devices Public/Granted day:2025-03-11
Information query
IPC分类: