Provided are a solid-state imaging device, a method for manufacturing a solid-state imaging device and an electronic apparatus that are capable of achieving maximized photo-responsiveness, ensuring low optical SNR in addition to reproducibility, and further reducing the pixel size, thereby efficiently improving important performance factors such as the dynamic range, responsiveness, and resolution. The charges integrated in a first photoelectric conversion element are stored in a storage node, and charges overflowing from the first photoelectric conversion element are stored in a floating diffusion. The charges integrated in a second photoelectric conversion element are stored in a storage node, and charges overflowing from the second photoelectric conversion element are discharged to the region that is not occupied by the floating diffusion.