SOLID-STATE IMAGING DEVICE, METHOD FOR DRIVING SOLID-STATE IMAGING DEVICE, AND ELECTRONIC APPARATUS

    公开(公告)号:US20240022836A1

    公开(公告)日:2024-01-18

    申请号:US18221260

    申请日:2023-07-12

    IPC分类号: H04N25/77 H04N25/42

    CPC分类号: H04N25/77 H04N25/42

    摘要: Provided are a solid-state imaging device, a method for driving a solid-state imaging device, and an electronic apparatus that are capable of selecting a pixel operating mode between a RS mode and a GS mode and switching a conversion gain read-out mode, where signals produced with different conversion gains are read, among several options depending on a scene. As a result, the solid-state imaging device, the method for driving the solid-state imaging device and the electronic apparatus can minimize a drop in SNR at the conjunction point between a HCG signal and a LCG signal and also achieve high full well capacity and little dark noise. In a solid-state imaging device, a pixel part includes pixels arranged in a matrix pattern, and each pixel includes a photoelectric conversion reading part. The solid-state imaging device is capable of performing rolling shutter (RS) and global shutter (GS).

    SOLID-STATE IMAGING DEVICE, METHOD FOR MANUFACTURING SOLID-STATE IMAGING DEVICE, AND ELECTRONIC APPARATUS

    公开(公告)号:US20230156369A1

    公开(公告)日:2023-05-18

    申请号:US17916418

    申请日:2021-03-30

    IPC分类号: H04N25/771 H04N25/78

    CPC分类号: H04N25/771 H04N25/78

    摘要: A source follower element is adjacent to a first lateral part of a floating diffusion in a first direction orthogonal to the first lateral part, a reset element is adjacent to a second lateral part of the floating diffusion in the first direction, and the floating diffusion and the source follower element are connected through a wiring. Some of the photoelectric conversion elements are adjacent to each other in a second direction and spaced away from each other with a first spacing therebetween that allows at least the source follower element and the reset element to be formed therein. Some of the photoelectric conversion elements are adjacent to each other in the first direction and spaced away from each other with a second spacing therebetween that is less than the first spacing.

    SYSTEM, METHOD, DEVICE AND DATA STRUCTURE FOR DIGITAL PIXEL SENSORS

    公开(公告)号:US20230300497A1

    公开(公告)日:2023-09-21

    申请号:US17999693

    申请日:2021-05-24

    IPC分类号: H04N25/78 H04N25/77

    CPC分类号: H04N25/78 H04N25/77

    摘要: Some embodiments relate to an imaging system including an active pixel a comparator, a write control circuit, and an analog-to-digital conversion (ADC) memory. The active pixel may include a photodiode and a plurality of transistors. The comparator may be operative coupled to the active pixel and configured to receive an output of the active pixel. The write control circuit may be operative coupled to the comparator and configured to receive an output from the comparator. The ADC memory may be operatively coupled to the write control circuit. A data structure may be stored in the ADC memory, and may be configured to store at least a first data string, which may include a set of flag bits for identifying each ADC operation performed and a set of ADC data bits.

    SYSTEM, METHOD, DEVICE AND DATA STRUCTURE FOR DIGITAL PIXEL SENSORS

    公开(公告)号:US20230300493A1

    公开(公告)日:2023-09-21

    申请号:US17999690

    申请日:2021-05-24

    IPC分类号: H04N5/225

    CPC分类号: H04N25/77

    摘要: Some embodiments relate to an active pixel for use in a digital pixel sensor (DPS) imaging system having complete intra-pixel charge transfer functionality. The active pixel may include a first photodiode, and a first transfer gate and a second transfer gate each operatively coupled to the first photodiode. The first transfer gate and the second transfer gate may reside at opposite sides of the first photodiode. An electron drift current within the first photodiode may cause two direction charge transfer of charge of the first photodiode to the first transfer gate and the second transfer gate.

    SOLID-STATE IMAGING DEVICE, METHOD FOR DRIVING SOLID-STATE IMAGING DEVICE, AND ELECTRONIC APPARATUS

    公开(公告)号:US20220321759A1

    公开(公告)日:2022-10-06

    申请号:US17710901

    申请日:2022-03-31

    IPC分类号: H04N5/235 H04N9/04 H04N5/243

    摘要: A solid-state imaging device, a method for driving the same, and an electronic apparatus can achieve a high dynamic range based on multiple exposure technique, where images captured with different exposure durations are combined, with it being possible to prevent motion artifacts and LED flickers. A pixel has a 4:0 configuration. The pixel is divided into, for example, four sub-pixels all of which have the same color (for example, G (green)). An access control part sets different charge integration periods and different charge storage starting times between photoelectric conversion parts PD of the sub-pixels and controls the charge integration periods such that they overlap each other. In other words, the access control part sets different charge integration periods and different charge storage starting times, the number of which corresponds to the number of sub-pixels having the same color, and controls the charge integration periods such that they overlap each other.

    SOLID-STATE IMAGING DEVICE, METHOD FOR DRIVING SOLID-STATE IMAGING DEVICE, AND ELECTRONIC APPARATUS

    公开(公告)号:US20220132067A1

    公开(公告)日:2022-04-28

    申请号:US17510891

    申请日:2021-10-26

    摘要: A photoelectric conversion reading part of a pixel includes a photoelectric conversion element for storing therein, in a storing period, charges generated by the photoelectric conversion, a transfer element for transferring, in a transfer period following the storing period, the charges stored in the photoelectric conversion element, an output node to which the charges stored in the photoelectric conversion element are transferred through the transfer element, a reset element for resetting, in a reset period, the output node to a predetermined potential, an output buffer part for converting the charges in the output node into a voltage signal at a level determined by the amount of the charges and outputting the voltage signal as the pixel signal, and an output voltage control part for controlling an output signal level of the pixel signal from the output buffer part to a controlled level determined by the operational state.