Invention Publication
- Patent Title: PLASMA PROCESSING APPARATUS, POWER SUPPLY SYSTEM, CONTROL METHOD, PROGRAM, AND STORAGE MEDIUM
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Application No.: US18607327Application Date: 2024-03-15
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Publication No.: US20240222078A1Publication Date: 2024-07-04
- Inventor: Gen TAMAMUSHI
- Applicant: Tokyo Electron Limited
- Applicant Address: JP Tokyo
- Assignee: Tokyo Electron Limited
- Current Assignee: Tokyo Electron Limited
- Current Assignee Address: JP Tokyo
- Priority: JP 21188303 2021.11.19
- Main IPC: H01J37/32
- IPC: H01J37/32

Abstract:
In a plasma processing apparatus, electrical bias energy is provided from a bias power supply to a substrate support. Source radio-frequency power is provided from a radio-frequency power supply to a radio-frequency electrode through a feed line. A phase period having a minimum value of a power level of a reflected wave of the source radio-frequency power is identified from a plurality of phase periods in a bias cycle of the electrical bias energy. A reference value being a phase difference between a voltage and a current on the feed line in the identified phase period is determined. A source frequency of the source radio-frequency power is controlled for each phase period based on a result of comparison between the reference value and the phase difference between the voltage and the current on the feed line in a corresponding phase period of the plurality of phase periods.
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