发明公开
- 专利标题: VIA FUSE WITH METAL-INSULATOR-METAL ARCHITECTURE AND IMPROVED ELECTRODE MATERIAL
-
申请号: US18148147申请日: 2022-12-29
-
公开(公告)号: US20240222270A1公开(公告)日: 2024-07-04
- 发明人: Yao-Feng Chang
- 申请人: Intel Corporation
- 申请人地址: US CA Santa Clara
- 专利权人: Intel Corporation
- 当前专利权人: Intel Corporation
- 当前专利权人地址: US CA Santa Clara
- 主分类号: H01L23/525
- IPC分类号: H01L23/525 ; H01L21/768
摘要:
An apparatus comprising a device layer comprising a plurality of transistors; a first electrode; a second electrode over the first electrode; and a fuse material layer within a via, the via coupling the first and second electrodes together, wherein the fuse material layer is to conduct a non-zero current responsive to a first voltage between the first and second electrodes, and is to form an irreversible open circuit responsive to a second voltage between the first and second electrodes, wherein a magnitude of the second voltage is less than two volts.
信息查询
IPC分类: