Invention Publication
- Patent Title: DEVICE FOR ELECTROSTATIC DISCHARGE PROTECTION USING SILICON CONTROLLED RECTIFIER
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Application No.: US18400792Application Date: 2023-12-29
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Publication No.: US20240222357A1Publication Date: 2024-07-04
- Inventor: Kyoungil DO , Jinwoo Jung , Jooyoung Song , Chanhee Jeon
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si
- Priority: KR 20230001332 2023.01.04 KR 20230048285 2023.04.12
- Main IPC: H01L27/02
- IPC: H01L27/02 ; H01L29/74

Abstract:
Provided is a device including a first clamp circuit electrically connected between a first node and a second node, and a second clamp circuit electrically connected between the second node and a third node, wherein the first clamp circuit includes a first silicon controlled rectifier (SCR) including a first region of a first conductivity type electrically connected to the first node, a second region of a second conductivity type, a third region of the first conductivity type, and a fourth region of the second conductivity type electrically connected to the second node, and a first gate electrode disposed over a channel region including a junction of the second region and the third region between the first region and the fourth region.
Information query
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