DEVICE FOR ELECTROSTATIC DISCHARGE PROTECTION USING SILICON CONTROLLED RECTIFIER
Abstract:
Provided is a device including a first clamp circuit electrically connected between a first node and a second node, and a second clamp circuit electrically connected between the second node and a third node, wherein the first clamp circuit includes a first silicon controlled rectifier (SCR) including a first region of a first conductivity type electrically connected to the first node, a second region of a second conductivity type, a third region of the first conductivity type, and a fourth region of the second conductivity type electrically connected to the second node, and a first gate electrode disposed over a channel region including a junction of the second region and the third region between the first region and the fourth region.
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