DEVICE FOR ELECTROSTATIC DISCHARGE PROTECTION USING SILICON-CONTROLLED RECTIFIER

    公开(公告)号:US20240413631A1

    公开(公告)日:2024-12-12

    申请号:US18733208

    申请日:2024-06-04

    Abstract: A device includes: a first silicon-controlled rectifier comprising a first PNP bipolar junction transistor (BJT) and a first NPN BJT in which bases and collectors are cross-coupled; and a field effect transistor (FET) configured to, based on an electrostatic discharge occurring between an anode of the first silicon-controlled rectifier and a cathode of the first silicon-controlled rectifier, trigger the first silicon-controlled rectifier. An emitter of the first PNP BJT corresponds to a plurality of first p+ regions being spaced apart from each other in a first direction. The FET is connected to the first silicon-controlled rectifier through at least one first n+ region disposed between the plurality of first p+ regions.

    DEVICE FOR ELECTROSTATIC DISCHARGE PROTECTION USING SILICON CONTROLLED RECTIFIER

    公开(公告)号:US20240222357A1

    公开(公告)日:2024-07-04

    申请号:US18400792

    申请日:2023-12-29

    CPC classification number: H01L27/0248 H01L29/7408 H01L29/7412

    Abstract: Provided is a device including a first clamp circuit electrically connected between a first node and a second node, and a second clamp circuit electrically connected between the second node and a third node, wherein the first clamp circuit includes a first silicon controlled rectifier (SCR) including a first region of a first conductivity type electrically connected to the first node, a second region of a second conductivity type, a third region of the first conductivity type, and a fourth region of the second conductivity type electrically connected to the second node, and a first gate electrode disposed over a channel region including a junction of the second region and the third region between the first region and the fourth region.

    ELECTRO-STATIC DISCHARGE PROTECTION DEVICE
    3.
    发明公开

    公开(公告)号:US20240105711A1

    公开(公告)日:2024-03-28

    申请号:US18361892

    申请日:2023-07-30

    CPC classification number: H01L27/0262 H01L27/0255 H01L27/0292 H02H9/046

    Abstract: An electro-static discharge protection device includes a substrate that includes a first well that has a first conductive type and a second well that has a second conductive type, and first to eighth diffusion regions formed on the first well and the second well. At least a portion of the diffusion regions formed in the first well are connected to a first electrode, and at least a portion of diffusion regions formed in a second well are connected to a second electrode. The contact between one of diffusion regions formed in the first well and an N well forms a trigger diode. A junction between one of diffusion regions formed in a second well and a P well forms a trigger diode. The trigger diodes are electrically connected to each other.

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