Invention Publication
- Patent Title: SEMICONDUCTOR DEVICE
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Application No.: US18560959Application Date: 2022-05-13
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Publication No.: US20240234310A1Publication Date: 2024-07-11
- Inventor: Yoshiyuki KUROKAWA , Hiromichi GODO , Kazuki TSUDA , Kouhei TOYOTAKA , Satoru OHSHITA , Hidefumi RIKIMARU , Hideki UOCHI
- Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
- Applicant Address: JP Atsugi-shi, Kanagawa-ken
- Assignee: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
- Current Assignee: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
- Current Assignee Address: JP Atsugi-shi, Kanagawa-ken
- Priority: JP 21089139 2021.05.27 JP 21094133 2021.06.04
- International Application: PCT/IB2022/054455 2022.05.13
- Date entered country: 2023-11-15
- Main IPC: H01L23/528
- IPC: H01L23/528 ; H01L29/24

Abstract:
A novel semiconductor device is provided. In reservoir computing using an input layer, a reservoir layer, and an output layer, variation in threshold voltage between transistors is used as a weight used for product arithmetic processing. Two transistors are provided in one product arithmetic circuit and data u is supplied to gates of the two transistors. Drain current of each of the transistors is determined by the data u and the threshold voltage of the transistor. The difference between the drain currents corresponds to a product arithmetic result. The difference between the drain currents is converted into voltage to be output. A plurality of product arithmetic circuits are connected in parallel to form a product-sum arithmetic circuit.
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